MG8N6ES42Toshiba - IGBT Power Transistor Module

Specifications: 1000V, 8A

MG8N6ES42, Toshiba, Power Module

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MG8N6ES42 Description

The Toshiba MG8N6ES42 is an IGBT module rated at 1000 V and 8 A, available from USComponent. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG8N6ES42.

Target Applications

Toshiba MG8N6ES42 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1000 V
Rated current8 A

Download MG8N6ES42 Datasheet

Datasheet not available