MG800J2YS50A Toshiba - IGBT Power Transistor Module

MG800J2YS50A Description

Toshiba MG800J2YS50A is an IGBT module rated at 600 V and 800 A. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

Need the MG800J2YS50A? USComponent stocks and sources power modules for repair shops, OEMs and maintenance teams worldwide. Request a quote and we'll confirm availability and lead time. Always compare against the datasheet before ordering.

Summary of Features

Target Applications

Toshiba MG800J2YS50A is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG800J2YS50A is a 600 V, 800 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	600 V
Collector current (IC)	800 A
Datasheet	Available on this page (PDF)

Technical document (PDF)  |  Request a quote for MG800J2YS50A (reply within 24 hours)