MG800J1US52A Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 600V, 800A

MG800J1US52A, Toshiba, Power Module

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MG800J1US52A Description

The Toshiba MG800J1US52A is an IGBT module, rated for 600 V and 800 A. Inside, it has a single switch with its freewheeling diode (1-in-1). Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG800J1US52A; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

MG800J1US52A is a 600 V, 800 A IGBT / power transistor module, single configuration.

Target Applications

Toshiba MG800J1US52A is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG800J1US52A is a 600 V, 800 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSingle
Collector-emitter voltage (VCES)600 V
Collector current (IC)800 A
DatasheetAvailable on this page (PDF)

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