MG200J2YS50Toshiba - IGBT Module

MG200J2YS50 Description

MG200J2YS50 is a power module that contains two insulated gate bipolar transistors (IGBTs) in a single package. It is designed for high-power switching applications such as motor drives, power converters, and inverters. The "MG" in the part number indicates that the module is manufactured by Toshiba. The "200" in the part number refers to the maximum collector current rating of each IGBT in amperes. The "J2" indicates a dual IGBT configuration, and the "YS50" indicates the maximum blocking voltage rating of each IGBT in volts. The IGBTs in this module are designed to handle high voltage and high current with low conduction losses and fast switching speeds. The dual IGBT configuration allows for bidirectional power flow, making it suitable for applications such as motor drives and power converters. The MG200J2YS50 module also includes built-in protection features such as overcurrent protection, overvoltage protection, and thermal protection to ensure safe and reliable operation in harsh environments. It is commonly used in industrial applications such as motor drives, welding machines, and uninterruptible power supplies.

Target Applications

Toshiba MG200J2YS50 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-95A1A
VCES	600 V
IC	200 A (DC)
ICP	400 A (1 ms)
VCE(sat) max.	2.70 V @ 200 A
Collector power dissipation	900 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal / mounting: 3 / 3 N·m
Junction temperature	150 °C max.

Download MG200J2YS50 Datasheet

MG200J2YS50 PDF Datasheet