MG400J2YS50Toshiba - Power Transistor Module

MG400J2YS50 Description

The Toshiba MG400J2YS50 is a power semiconductor module rated at 600 V and 400 A, available from USComponent. This type of component is widely used in motor drives, power conversion and industrial control equipment.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG400J2YS50.

Target Applications

Toshiba MG400J2YS50 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-109D1A
VCES	600 V
IC	400 A (DC)
ICP	800 A (1 ms)
VCE(sat) max.	2.70 V @ 400 A
Collector power dissipation	1800 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal / mounting: 3 / 3 N·m
Weight	540 g
Junction temperature	150 °C max.

MG400J2YS50 Video

Download MG400J2YS50 Datasheet

MG400J2YS50 PDF Datasheet