MG50N2YK1 Toshiba - Bipolar Transistor Module

MG50N2YK1 Description

The Toshiba MG50N2YK1 is an IGBT module, rated for 900 V and 50 A. Inside, it has two switches in a half-bridge (2-in-1) arrangement. It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies. Production of many older modules has ended, but we keep sourcing them for repair and maintenance customers.

We help engineers and repair technicians find parts like the MG50N2YK1, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.

Summary of Features

Target Applications

Toshiba MG50N2YK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG50N2YK1 is a 1,000 V, 50 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,000 V
Collector current (IC)	50 A
Datasheet	Available on this page (PDF)

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