MG50N2CK1 Toshiba - IGBT Power Transistor Module

MG50N2CK1 Description

Rated at 1000 V and 50 A, the Toshiba MG50N2CK1 is an IGBT module. It is built with two switches in a half-bridge (2-in-1) arrangement. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment. Production of many older modules has ended, but we keep sourcing them for repair and maintenance customers.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG50N2CK1, and please confirm ratings against the datasheet before ordering.

Summary of Features

Target Applications

Toshiba MG50N2CK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG50N2CK1 is a 1,000 V, 50 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,000 V
Collector current (IC)	50 A
Datasheet	Available on this page (PDF)

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