MG200N1US41 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 200A/1000V

MG200N1US41 IGBT Power Transistor Module from Toshiba

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MG200N1US41 Description

The Toshiba MG200N1US41 is an IGBT module, rated for 1000 V and 200 A. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

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Summary of Features

N Channel IGBT (High Power Switching / Motor Control Applications)

Target Applications

Toshiba MG200N1US41 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1000 V
Rated current200 A