FF6MR20W2M1H_B70 Infineon - SiC MOSFET Module

Also written as: FF6MR20W2M1H-B70

Category: MOSFET Modules

Specifications: 2000V, 160A

FF6MR20W2M1H_B70 Infineon SiC MOSFET Module

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FF6MR20W2M1H_B70 Description

FF6MR20W2M1H_B70 is a 2000 V / 160 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies. Typical applications: EV charging, Energy storage systems (ESS), Solar applications, DC/DC converter.

USComponent supplies FF6MR20W2M1H_B70 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Overload operation up to 175°C
  • AlN substrate with low thermal resistance
  • High creepage and clearance distances
  • Integrated NTC temperature sensor
  • PressFIT contact technology

Target Applications

Infineon FF6MR20W2M1H_B70 is used for EV charging, Energy storage systems (ESS), Solar applications, DC/DC converter.

Key Specifications

FF6MR20W2M1H_B70 is a 2000 V / 160 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies (EasyPACK 2B package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeCoolSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)2000 V
Nominal drain current (ID nom)160 A
PackageEasyPACK 2B
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for FF6MR20W2M1H_B70 (reply within 24 hours)

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