FF650R17IE4DP_B2 Infineon - IGBT Module

Also written as: FF650R17IE4DP-B2

Category: IGBT Modules

Specifications: 1700V, 650A

FF650R17IE4DP_B2 Infineon IGBT Module

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FF650R17IE4DP_B2 Description

FF650R17IE4DP_B2 is a 1700 V / 650 A dual (half-bridge) IGBT module from Infineon Technologies. Typical applications: traction drives, Wind turbines.

USComponent supplies FF650R17IE4DP_B2 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • High short-circuit capability
  • High surge current capability
  • High current density
  • Vcesat with positive temperature coefficient
  • Enlarged diode for regenerative operation
  • 4 kV AC 1min insulation
  • High creepage and clearance distances
  • High power and thermal cycling capability

Target Applications

Infineon FF650R17IE4DP_B2 is used for Traction drives, Wind turbines.

Key Specifications

FF650R17IE4DP_B2 is a 1700 V / 650 A dual (half-bridge) IGBT module from Infineon Technologies (PrimePACK 2 package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationDual (half-bridge)
Collector-emitter voltage (VCES)1700 V
Nominal collector current (IC nom)650 A
PackagePrimePACK 2
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for FF650R17IE4DP_B2 (reply within 24 hours)

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