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FF650R17IE4DP_B2 Infineon - IGBT Module
Also written as: FF650R17IE4DP-B2
FF650R17IE4DP_B2 Description
FF650R17IE4DP_B2 is a 1700 V / 650 A dual (half-bridge) IGBT module from Infineon Technologies. Typical applications: traction drives, Wind turbines.
USComponent supplies FF650R17IE4DP_B2 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- High short-circuit capability
- High surge current capability
- High current density
- Vcesat with positive temperature coefficient
- Enlarged diode for regenerative operation
- 4 kV AC 1min insulation
- High creepage and clearance distances
- High power and thermal cycling capability
Target Applications
Infineon FF650R17IE4DP_B2 is used for Traction drives, Wind turbines.
Key Specifications
FF650R17IE4DP_B2 is a 1700 V / 650 A dual (half-bridge) IGBT module from Infineon Technologies (PrimePACK 2 package). Source: Infineon datasheet and product table.
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product type | IGBT module |
| Configuration | Dual (half-bridge) |
| Collector-emitter voltage (VCES) | 1700 V |
| Nominal collector current (IC nom) | 650 A |
| Package | PrimePACK 2 |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for FF650R17IE4DP_B2 (reply within 24 hours)
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