FF6MR12W2M1H_B70 Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 150A

FF6MR12W2M1H_B70 Infineon SiC MOSFET Module

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FF6MR12W2M1H_B70 Description

FF6MR12W2M1H_B70 is a 1200 V, 150 A Infineon EasyDUAL SiC MOSFET module (dual), used for solar applications, high-frequency switching, DC/DC converter, UPS systems.

USComponent supplies FF6MR12W2M1H_B70 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Low switching losses
  • Low inductive design
  • High current density
  • Rugged mounting due to integrated mounting clamps
  • PressFIT contact technology
  • Integrated NTC temperature sensor
  • AlN substrate with low thermal resistance

Target Applications

Infineon FF6MR12W2M1H_B70 is used for solar applications, high-frequency switching applications, DC/DC converter and UPS systems.

Key Specifications

FF6MR12W2M1H_B70 is a 1,200 V, 150 A Infineon EasyDUAL SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)1,200 V
Drain current (IDN)150 A
TechnologyCoolSiC Trench MOSFET (M1H)
PackageEasyDUAL

Technical document (PDF)  |  Request a quote for FF6MR12W2M1H_B70 (reply within 24 hours)

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