FF7MR12W1M1H_B17 Infineon - SiC MOSFET Module

Also written as: FF7MR12W1M1H-B17

Category: MOSFET Modules

Specifications: 1200V, 120A

FF7MR12W1M1H_B17 Infineon SiC MOSFET Module

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FF7MR12W1M1H_B17 Description

FF7MR12W1M1H_B17 is a 1200 V / 120 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies. Typical applications: high-frequency switching application, DC/DC converter, UPS systems, DC charger for EV.

USComponent supplies FF7MR12W1M1H_B17 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Low inductive design
  • Low switching losses
  • PressFIT contact technology
  • Integrated NTC temperature sensor
  • Rugged mounting due to integrated mounting clamps

Target Applications

Infineon FF7MR12W1M1H_B17 is used for High-frequency switching application, DC/DC converter, UPS systems, DC charger for EV.

Key Specifications

FF7MR12W1M1H_B17 is a 1200 V / 120 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies (EasyDUAL package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeCoolSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)1200 V
Nominal drain current (ID nom)120 A
PackageEasyDUAL
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for FF7MR12W1M1H_B17 (reply within 24 hours)

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