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FF7MR12W1M1H_B17 Infineon - SiC MOSFET Module
Also written as: FF7MR12W1M1H-B17
FF7MR12W1M1H_B17 Description
FF7MR12W1M1H_B17 is a 1200 V / 120 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies. Typical applications: high-frequency switching application, DC/DC converter, UPS systems, DC charger for EV.
USComponent supplies FF7MR12W1M1H_B17 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- Low inductive design
- Low switching losses
- PressFIT contact technology
- Integrated NTC temperature sensor
- Rugged mounting due to integrated mounting clamps
Target Applications
Infineon FF7MR12W1M1H_B17 is used for High-frequency switching application, DC/DC converter, UPS systems, DC charger for EV.
Key Specifications
FF7MR12W1M1H_B17 is a 1200 V / 120 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies (EasyDUAL package). Source: Infineon datasheet and product table.
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product type | CoolSiC MOSFET module |
| Configuration | Dual (half-bridge) |
| Drain-source voltage (VDSS) | 1200 V |
| Nominal drain current (ID nom) | 120 A |
| Package | EasyDUAL |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for FF7MR12W1M1H_B17 (reply within 24 hours)
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