FF6MR12W2M1HP_B11 Infineon - SiC MOSFET Module
FF6MR12W2M1HP_B11 Description
FF6MR12W2M1HP_B11 is a 1200 V, 150 A Infineon EasyDUAL SiC MOSFET module (dual), used for UPS systems, high-frequency switching, DC/DC converter, solar applications.
USComponent supplies FF6MR12W2M1HP_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- Low switching losses
- Low inductive design
- High current density
- Rugged mounting due to integrated mounting clamps
- PressFIT contact technology
- Integrated NTC temperature sensor
- Pre-applied thermal interface material
Target Applications
Infineon FF6MR12W2M1HP_B11 is used for UPS systems, high-frequency switching applications, DC/DC converter and solar applications.
Key Specifications
FF6MR12W2M1HP_B11 is a 1,200 V, 150 A Infineon EasyDUAL SiC MOSFET module. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | SiC MOSFET module |
| Configuration | Dual (half-bridge) |
| Drain-source voltage (VDSS) | 1,200 V |
| Drain current (IDN) | 150 A |
| Technology | CoolSiC Trench MOSFET (M1H) |
| Package | EasyDUAL |
Technical document (PDF) | Request a quote for FF6MR12W2M1HP_B11 (reply within 24 hours)
Related Part Numbers
| FF4MR12W2M1HP_B11 1200V, 200A | FF11MR12W2M1HP_B11 1200V, 75A | FF17MR12W1M1HP_B11 1200V, 50A | FF33MR12W1M1HP_B11 1200V, 25A |
| FF4MR12W2M1HP_B11_A 1200V, 200A | FF6MR12W2M1H_B11 1200V, 150A | FF6MR12KM1HP 1200V, 180A | FF6MR12W2M1H_B70 1200V, 150A |
| FF6MR12KM1H 1200V, 180A | FF6MR20W2M1H_B70 2000V, 160A | FF650R17IE4V 1700V, 650A | FF650R17IE4P 1700V, 650A |
| FF650R17IE4D_B2 1700V, 650A | FF650R17IE4DP_B2 1700V, 650A | FF650R17IE4 1700V, 650A | FF600R17ME7_B11 1700V, 600A |

