FF6MR12W2M1HP_B11 Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 150A

FF6MR12W2M1HP_B11 Infineon SiC MOSFET Module

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FF6MR12W2M1HP_B11 Description

FF6MR12W2M1HP_B11 is a 1200 V, 150 A Infineon EasyDUAL SiC MOSFET module (dual), used for UPS systems, high-frequency switching, DC/DC converter, solar applications.

USComponent supplies FF6MR12W2M1HP_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • 1,200 V / 150 A dual SiC MOSFET module
  • CoolSiC Trench MOSFET (M1H)
  • EasyDUAL housing
  • Low switching losses for high-frequency operation
  • PressFIT contact technology
  • Pre-applied thermal interface material (TIM)

Target Applications

Infineon FF6MR12W2M1HP_B11 is used for UPS systems, high-frequency switching, DC/DC converter, solar applications.

Key Specifications

FF6MR12W2M1HP_B11 is a 1,200 V, 150 A Infineon EasyDUAL SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)1,200 V
Drain current (IDN)150 A
TechnologyCoolSiC Trench MOSFET (M1H)
PackageEasyDUAL

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