FF4MR12W2M1H_B11 Infineon - SiC MOSFET Module
FF4MR12W2M1H_B11 Description
FF4MR12W2M1H_B11 is a 1200 V, 200 A Infineon EasyDUAL SiC MOSFET module (dual), used for solar applications, high-frequency switching, DC/DC converter, UPS systems.
USComponent supplies FF4MR12W2M1H_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- 1,200 V / 200 A dual SiC MOSFET module
- CoolSiC Trench MOSFET (M1H)
- EasyDUAL housing
- Low switching losses for high-frequency operation
- PressFIT contact technology
- Integrated NTC temperature sensor
Target Applications
Infineon FF4MR12W2M1H_B11 is used for Solar applications, high-frequency switching, DC/DC converter, UPS systems.
Key Specifications
FF4MR12W2M1H_B11 is a 1,200 V, 200 A Infineon EasyDUAL SiC MOSFET module. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | SiC MOSFET module |
| Configuration | Dual (half-bridge) |
| Drain-source voltage (VDSS) | 1,200 V |
| Drain current (IDN) | 200 A |
| Technology | CoolSiC Trench MOSFET (M1H) |
| Package | EasyDUAL |
Technical document (PDF) | Request a quote for FF4MR12W2M1H_B11 (reply within 24 hours)

