FF4MR12W2M1H_B70 Infineon - SiC MOSFET Module

Also written as: FF4MR12W2M1H-B70

Category: MOSFET Modules

Specifications: 1200V, 200A

FF4MR12W2M1H_B70 Infineon SiC MOSFET Module

Representative image – actual product may differ

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FF4MR12W2M1H_B70 Description

FF4MR12W2M1H_B70 is a 1200 V / 200 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies. Typical applications: UPS systems, Solar applications, DC/DC converter, High-frequency switching application.

USComponent supplies FF4MR12W2M1H_B70 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Low inductive design
  • Low switching losses
  • High current density
  • Improved ceramic substrate
  • Integrated NTC temperature sensor

Target Applications

Infineon FF4MR12W2M1H_B70 is used for UPS systems, Solar applications, DC/DC converter, High-frequency switching application.

Key Specifications

FF4MR12W2M1H_B70 is a 1200 V / 200 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies (EasyDUAL package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeCoolSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)1200 V
Nominal drain current (ID nom)200 A
PackageEasyDUAL
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for FF4MR12W2M1H_B70 (reply within 24 hours)

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