DF100R07W1H5FP_B53 Infineon - IGBT Module

Also written as: DF100R07W1H5FP-B53

Category: IGBT Modules

Specifications: 650V, 50A

DF100R07W1H5FP_B53 Infineon IGBT Module

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DF100R07W1H5FP_B53 Description

DF100R07W1H5FP_B53 is a 650 V / 50 A chopper / booster IGBT module from Infineon Technologies. Typical applications: solar applications.

USComponent supplies DF100R07W1H5FP_B53 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • CoolSiC Schottky diode gen 5
  • Increased blocking voltage capability up to 650V
  • Low inductive design
  • Low switching losses
  • Al2O3 substrate with low thermal resistance
  • Integrated NTC temperature sensor
  • PressFIT contact technology
  • Pre-applied Thermal Interface Material

Target Applications

Infineon DF100R07W1H5FP_B53 is used for Solar applications.

Key Specifications

DF100R07W1H5FP_B53 is a 650 V / 50 A chopper / booster IGBT module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationChopper / booster
Collector-emitter voltage (VCES)650 V
Nominal collector current (IC nom)50 A
PackageEasyPACK
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF100R07W1H5FP_B53 (reply within 24 hours)

Related Part Numbers

DF100R07W1H5FP_B54
650V, 50A		DF80R07W1H5FP_B11
650V, 40A		DF75R12W1H4F_B11
1200V, 75A		DF200R07W2H3_B77
650V, 100A
DF200R12W1H3_B27
1200V, 30A		DF200R12W1H3F_B11
1200V, 30A		DF100LB80
800V, 100A		DF100LB160
1600V, 100A
DF100LA80
800V, 100A		DF100LA160
1600V, 100A		DF100LA120
1200V, 100A		DF100BA80
800V, 100A
DF100BA40
400V, 100A		DF100AA160
1600V, 100A		DF100AA120
1200V, 100A		DF1000R17IE4P
1700V, 1000A
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