MIG75Q202H Toshiba - IGBT Power Transistor Module

Category: Intelligent Power Modules (IPM)

Specifications: 1200V, 75A

MIG75Q202H IGBT Power Transistor Module from Toshiba

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MIG75Q202H Description

MIG75Q202H is an intelligent power module, IGBT inverter + brake with control circuits from Toshiba, rated 1200V, 75A. Typical applications: High power switching applications and motor control applications.

USComponent supplies MIG75Q202H and other power semiconductors and power supplies, including discontinued types. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, realtime-current-control, under-voltage & over-temperature) in one package
  • The electrodes are isolated from case
  • High speed type IGBT

Target Applications

Toshiba MIG75Q202H is used for High power switching applications and motor control applications.

Key Specifications

MIG75Q202H is an intelligent power module, IGBT inverter + brake with control circuits from Toshiba, rated 1200V, 75A. Source: manufacturer datasheet.

ParameterValue
ManufacturerToshiba
Collector-emitter voltage VCES1200 V
Supply voltage VCC (P-N)900 V
Inverter collector current IC (Tc = 25 °C)75 A
Collector power dissipation (inverter)400 W
VCE(sat) max.3.5 V
toff max. / trr max.2.8 µs / 0.21 µs
Isolation voltage2500 V (AC 1 min)
Package / weightTOSHIBA 2-110A1A, 520 g
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MIG75Q202H (reply within 24 hours)

Related Part Numbers

MIG75Q201H
1200V, 75A		MIG50Q202H
1200V, 50A		MIG100Q201H
1200V, 100A		MIG50Q201H
1200V, 50A
MIG150Q101H
1200V, 150A		MIG150Q201H
1200V, 150A		MIG30Q901H
1200V, 300A		MIG200Q101H
1200V, 200A
MIG75Q7CSA0X
1200V, 75A		MIG75Q7CSAOAX
1200V, 75A		MIG75Q7CSAOX
1200V, 75A		MIG75Q7CSB1X
1200V, 75A
MIG75J7CSB1W
600V, 75A		MIG75J7CSAOA
600V, 75A		MIG75J6CSB1W
600V, 75A		MIG75J201H
600V, 75A
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