MIG75Q202HToshiba - IGBT Power Transistor Module

Specifications: 75A/1200V

MIG75Q202H IGBT Power Transistor Module from Toshiba

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MIG75Q202H Description

Toshiba MIG75Q202H is an intelligent power module (IPM) rated at 1200 V and 75 A. Brushless Multi-Phase dc Motor Driver High Power Switching Applications Motor Control Applications. This type of device is widely used in compact motor drives, servo amplifiers and inverter-based equipment, where the IPM combines power switches with built-in gate drive and protection circuitry.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MIG75Q202H.

Summary of Features

N Channel IGBT (High Power Switching / Motor Control Applications)

Target Applications

Toshiba MIG75Q202H is used for High Power Switching / Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current75 A

Download MIG75Q202H Datasheet

Datasheet not available