MIG200Q101HToshiba - IGBT Power Transistor Module

Specifications: 1200V, 200A

MIG200Q101H, Toshiba, Power Module

We beat competitor's price with faster delivery.

For 6 pieces or more, submit your inquiry here, email to sales@uscomponent.com or call 1-281-968-0718

MIG200Q101H Description

Toshiba MIG200Q101H is an intelligent power module (IPM) rated at 1200 V and 200 A. Typical applications for this type of device include compact motor drives, servo amplifiers and inverter-based equipment, where the IPM combines power switches with built-in gate drive and protection circuitry.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MIG200Q101H.

Target Applications

Toshiba MIG200Q101H is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current200 A

Download MIG200Q101H Datasheet

MIG200Q101H PDF Datasheet