MIG150Q101HToshiba - IGBT Power Transistor Module

Specifications: 1200V, 150A

MIG150Q101H, Toshiba, Power Module

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MIG150Q101H Description

The Toshiba MIG150Q101H is an intelligent power module (IPM) rated at 1200 V and 150 A, available from USComponent. Components of this type are commonly used in compact motor drives, servo amplifiers and inverter-based equipment, where the IPM combines power switches with built-in gate drive and protection circuitry.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MIG150Q101H.

Target Applications

Toshiba MIG150Q101H is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current150 A

Download MIG150Q101H Datasheet

MIG150Q101H PDF Datasheet