MG25Q1BS11 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 25A

MG25Q1BS11, Toshiba, Power Module

We beat competitor's price with faster delivery.

For 6 pieces or more, submit your inquiry here, email to sales@uscomponent.com or call 1-281-968-0718

MG25Q1BS11 Description

Toshiba makes the MG25Q1BS11, a 1200 V, 25 A IGBT module. It is built with a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG25Q1BS11; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

MG25Q1BS11 is a 1,200 V, 25 A IGBT / power transistor module, single configuration.

Target Applications

Toshiba MG25Q1BS11 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG25Q1BS11 is a 1,200 V, 25 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSingle
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)25 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG25Q1BS11 (reply within 24 hours)