MG50J2YS1 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 600V, 50A

MG50J2YS1, Toshiba, Power Module

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MG50J2YS1 Description

Toshiba MG50J2YS1 is an IGBT module rated at 600 V and 50 A. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG50J2YS1, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG50J2YS1 is a 600 V, 50 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG50J2YS1 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG50J2YS1 is a 600 V, 50 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)600 V
Collector current (IC)50 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50J2YS1 (reply within 24 hours)