MG50M1BK1 Toshiba - Bipolar Transistor Module

Category: IGBT Modules

Specifications: 50A/1000V

MG50M1BK1 IGBT Power Transistor Module from Toshiba

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MG50M1BK1 Description

Rated at 1000 V and 50 A, the Toshiba MG50M1BK1 is an IGBT module. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG50M1BK1, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG50M1BK1 is a 50 A IGBT / power transistor module.

Target Applications

Toshiba MG50M1BK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG50M1BK1 is a 50 A IGBT / power transistor module. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
Collector current (IC)50 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50M1BK1 (reply within 24 hours)

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