MG50M1BK1Toshiba - IGBT Power Transistor Module

Specifications: 50A/1000V

MG50M1BK1 IGBT Power Transistor Module from Toshiba

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MG50M1BK1 Description

Toshiba MG50M1BK1 is an IGBT module rated at 1000 V and 50 A. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG50M1BK1.

Summary of Features

Transistor Power Module

Target Applications

Toshiba MG50M1BK1 is used for High Power Switching / Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1000 V
Rated current50 A

Download MG50M1BK1 Datasheet

MG50M1BK1 PDF Datasheet