MG50M2CK1 Toshiba - Bipolar Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1000V, 50A

MG50M2CK1, TOSHIBA, GTR Module Silicon NPN Triple Diffused Type

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MG50M2CK1 Description

MG50M2CK1 is a 1000 V, 50 A Darlington transistor module made by Toshiba. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

Request a quote for the MG50M2CK1 and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Target Applications

Toshiba MG50M2CK1 is used for High Power Switching Applications and Motor Controls Applications.

Key Specifications

ManufacturerToshiba
CategoryBipolar Transistor Module
Rated voltage1000 V
Rated current50 A

Technical document (PDF)  |  Request a quote for MG50M2CK1 (reply within 24 hours)

Related Part Numbers

MG75M2CK1
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MG150M2CK1
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1000V, 25A		MG50M2YK1
1000V, 50A		MG50M2YK9
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MG50M1BK1
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600(V) / 50(A)		MG50J6ES53
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1000V, 50A		MG50N2CK1
1000V, 50A		MG50J6ES50
600V, 50A		MG50N2YK1
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