MG50M2CK1Toshiba - Power Transistor Module

Specifications: 1000V, 50A

MG50M2CK1, TOSHIBA, GTR Module Silicon NPN Triple Diffused Type

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MG50M2CK1 Description

The Toshiba MG50M2CK1 is a power semiconductor module rated at 1000 V and 50 A, available from USComponent. GTR Module Silicon NPN Triple Diffused Type. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG50M2CK1.

Target Applications

Toshiba MG50M2CK1 is used for High Power Switching Applications and Motor Controls Applications.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage1000 V
Rated current50 A

Download MG50M2CK1 Datasheet

MG50M2CK1 PDF Datasheet