MG50J6ES91Toshiba - Power Transistor Module

Specifications: 600(V) / 50(A)

MG50J6ES91 IGBT Module from Toshiba

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MG50J6ES91 Description

The Toshiba MG50J6ES91 is a power semiconductor module rated at 600 V and 50 A. Components of this type are commonly used in motor drives, power conversion and industrial control equipment.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG50J6ES91.

Summary of Features

IGBT Module

Target Applications

Toshiba MG50J6ES91 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage600 V
Rated current50 A

Download MG50J6ES91 Datasheet

MG50J6ES91 PDF Datasheet