MG200J2YS11Toshiba - IGBT Power Transistor Module

MG200J2YS11 Description

Toshiba MG200J2YS11 is an IGBT module rated at 1200 V and 200 A. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG200J2YS11.

Target Applications

Toshiba MG200J2YS11 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1200 V
Rated current	200 A

Download MG200J2YS11 Datasheet

Datasheet not available