MG100J2YS50 Toshiba - IGBT Module

Category: IGBT Modules

Specifications: 600V, 100A

MG100J2YS50, TOSHIBA, GTR Module Silicon N Channel IGBT

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MG100J2YS50 Description

The Toshiba MG100J2YS50 is an IGBT module, rated for 600 V and 100 A. Inside, it has two switches in a half-bridge (2-in-1) arrangement. It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

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Target Applications

Toshiba MG100J2YS50 is used for High Power Switching and Motor Control Applications.

Key Specifications

ManufacturerToshiba
ConfigurationDual IGBT module (complete half bridge) with free-wheeling diodes
PackageToshiba 2-94D1A
VCES600 V
IC100 A (DC)
ICP200 A (1 ms)
VCE(sat) max.2.70 V @ 100 A
Collector power dissipation450 W
Isolation voltage2500 V (AC, 1 min)
Screw torqueTerminal / mounting: 3 / 3 N·m
Weight202 g
Junction temperature150 °C max.

MG100J2YS50 Video

MG100J2YS50 video

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