MG100J2YS50Toshiba - IGBT Module

Specifications: 600V, 100A

MG100J2YS50, TOSHIBA, GTR Module Silicon N Channel IGBT

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MG100J2YS50 Description

The Toshiba MG100J2YS50 is an IGBT module rated at 600 V and 100 A, available from USComponent. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG100J2YS50.

Target Applications

Toshiba MG100J2YS50 is used for High Power Switching and Motor Control Applications.

Key Specifications

ManufacturerToshiba
ConfigurationDual IGBT module (complete half bridge) with free-wheeling diodes
PackageToshiba 2-94D1A
VCES600 V
IC100 A (DC)
ICP200 A (1 ms)
VCE(sat) max.2.70 V @ 100 A
Collector power dissipation450 W
Isolation voltage2500 V (AC, 1 min)
Screw torqueTerminal / mounting: 3 / 3 N·m
Weight202 g
Junction temperature150 °C max.

MG100J2YS50 Video

Download MG100J2YS50 Datasheet

MG100J2YS50 PDF Datasheet