MG200J2YS21Toshiba - IGBT Power Transistor Module

Specifications: 200A/600V

MG200J2YS21 IGBT Power Transistor Module from Toshiba

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MG200J2YS21 Description

The Toshiba MG200J2YS21 is an IGBT module rated at 600 V and 200 A. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

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Summary of Features

N Channel IGBT (High Power Switching / Motor Control Applications)

Target Applications

Toshiba MG200J2YS21 is used for High Power Switching / Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage600 V
Rated current200 A

Download MG200J2YS21 Datasheet

Datasheet not available