MG12064E4SYLToshiba - Power Transistor Module

Category: IGBT Modules

Specifications: 1700(V) / 120(A)

MG12064E4SYL IGBT Power Transistor Module from Toshiba

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MG12064E4SYL Description

Toshiba MG12064E4SYL is a power semiconductor module rated at 1700 V and 120 A. Components of this type are commonly used in motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG12064E4SYL.

Summary of Features

IGBT Module

Target Applications

Toshiba MG12064E4SYL is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage1700 V
Rated current120 A

Download MG12064E4SYL Datasheet

Datasheet not available