MG1200V1US51 Toshiba - IGBT Module

MG1200V1US51 Description

MG1200V1US51 is a GTR module, silicon N-channel IGBT, single from Toshiba, rated 1700V, 1200A. Typical applications: High power switching applications and motor control applications.

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Summary of Features

Target Applications

Toshiba MG1200V1US51 is used for High power switching applications and motor control applications.

Key Specifications

MG1200V1US51 is a GTR module, silicon N-channel IGBT, single from Toshiba, rated 1700V, 1200A. Source: manufacturer datasheet.

Parameter	Value
Manufacturer	Toshiba
Collector-emitter voltage VCES	1700 V
Collector current IC (DC)	1200 A
ICP (1 ms)	2400 A
Forward current IF (DC)	1200 A
Collector power dissipation (Tc = 25 °C)	5560 W
Junction temperature	-20 ~ 125 °C
Isolation voltage	5400 V (AC 1 min)
Datasheet	Available on this page (PDF)

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