SEMIX202GB066HDS Semikron - IGBT Module
SEMIX202GB066HDS Description
SEMIX202GB066HDS is a Trench IGBT module, SEMiX 2s, half bridge (2 IGBTs) from Semikron, rated 600V, 240A. Typical applications: Matrix converter, resonant inverter and current source inverter.
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Also available as SEMiX202GB066HDs-M04 / -M06 (pre-applied TIM: HALA P8 / HALA HT).
Summary of Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
Target Applications
Semikron SEMIX202GB066HDS is used for Matrix converter, resonant inverter and current source inverter.
Key Specifications
SEMIX202GB066HDS is a Trench IGBT module, SEMiX 2s, half bridge (2 IGBTs) from Semikron, rated 600V, 240A. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Manufacturer | Semikron |
| Collector-emitter voltage VCES | 600 V |
| IC (Tc = 25 / 80 °C) | 240 / 170 A |
| ICRM (1 ms) | 400 A |
| VCE(sat) typ. / max. (ICnom = 200 A, 25 °C) | 1.45 V / 1.9 V |
| Isolation voltage Visol | 4000 V (AC, 1 min) |
| Configuration | half bridge (2 IGBTs) |
| Package | SEMiX 2s |
| Datasheet | Available on this page (PDF) |
Note: Datasheet marked Target Data.
Technical document (PDF) | Request a quote for SEMIX202GB066HDS (reply within 24 hours)
Related Part Numbers
| SEMIX302GB066HDS 600V, 270A | SEMIX402GB066HDS 600V, 490A | SEMIX603GB066HDS 600V, 730A | SEMIX252GB126HDS 1200V, 242A |
| SEMIX302GB126HDS 1200V, 300A | SEMiX302GB176HDs 1700V, 200A | SEMIX353GB126HDS 1200V, 364A | SEMIX452GB126HDS 1200V, 470A |
| SEMIX202GB128DS 1200V, 190A | SEMIX201GD128DS 1200V, 200A | SEMiX202GB12E4s 1200V, 200A | SEMIX201GD066HDS 600V, 240A |
| SEMiX202GB12Vs 1200V, 200A | SEMiX205BT07F3SC4 650V, 200A | SEMiX205GD12E4V2 1200V, 200A | SEMiX205GD12M7HD 1200V, 200A |

