SEMIX603GB066HDS Semikron - IGBT Module
SEMIX603GB066HDS Description
SEMIX603GB066HDS is a trench IGBT module, SEMiX 3s, half bridge (2 IGBTs) from Semikron, rated 600V, 730A. Typical applications: Matrix converter, resonant inverter and current source inverter.
USComponent supplies SEMIX603GB066HDS and other power semiconductors and power supplies, including discontinued types. Request a quote for price and lead time - we reply within 24 hours.
Also available as SEMiX603GB066HDs-M04 / -M06 (pre-applied TIM: HALA P8 / HALA HT).
Summary of Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
Target Applications
Semikron SEMIX603GB066HDS is used for Matrix converter, resonant inverter and current source inverter.
Key Specifications
SEMIX603GB066HDS is a trench IGBT module, SEMiX 3s, half bridge (2 IGBTs) from Semikron, rated 600V, 730A. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Manufacturer | Semikron |
| Collector-emitter voltage VCES | 600 V |
| IC (Tc = 25 / 80 °C, Tj = 150 °C) | 730 / 520 A |
| IC (Tc = 25 / 80 °C, Tj = 175 °C) | 800 / 610 A |
| ICRM (1 ms) | 1200 A |
| Isolation voltage Visol | 4000 V (AC, 1 min) |
| Package | SEMiX 3s |
| Datasheet | Available on this page (PDF) |
Note: Datasheet marked Target Data.
Technical document (PDF) | Request a quote for SEMIX603GB066HDS (reply within 24 hours)
Related Part Numbers
| SEMIX402GB066HDS 600V, 490A | SEMIX302GB066HDS 600V, 379A | SEMIX202GB066HDS 600V, 240A | SEMIX604GB126HDS 1200V, 590A |
| SEMiX604GB176HDs 1700V, 400A | SEMiX653GB176HDs 1700V, 450A | SEMIX703GB126HDS 1200V, 642A | SEMIX503GB126HDS 1200V, 480A |
| SEMiX603GB12E4I25p 1200V, 600A | SEMiX603GAR12E4p 1200V, 600A | SEMiX603GB12E4Ip 1200V, 600A | SEMIX603GAR066HDS 600V, 600A |
| SEMiX603GB12E4p 1200V, 600A | SEMiX603GAL17E4pX 1700V, 600A | SEMiX603GB12E4pV1 1200V, 600A | SEMiX603GAL17E4pV1 1700V, 600A |

