SEMIX603GB066HDS Semikron - IGBT Module

Category: IGBT Modules

Specifications: 600V, 730A

SEMIX603GB066HDS, SEMIKRON, IGBT Module

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SEMIX603GB066HDS Description

SEMIX603GB066HDS is a trench IGBT module, SEMiX 3s, half bridge (2 IGBTs) from Semikron, rated 600V, 730A. Typical applications: Matrix converter, resonant inverter and current source inverter.

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Also available as SEMiX603GB066HDs-M04 / -M06 (pre-applied TIM: HALA P8 / HALA HT).

Summary of Features

  • Homogeneous Si
  • Trench = Trenchgate technology
  • VCE(sat) with positive temperature coefficient

Target Applications

Semikron SEMIX603GB066HDS is used for Matrix converter, resonant inverter and current source inverter.

Key Specifications

SEMIX603GB066HDS is a trench IGBT module, SEMiX 3s, half bridge (2 IGBTs) from Semikron, rated 600V, 730A. Source: manufacturer datasheet.

ParameterValue
ManufacturerSemikron
Collector-emitter voltage VCES600 V
IC (Tc = 25 / 80 °C, Tj = 150 °C)730 / 520 A
IC (Tc = 25 / 80 °C, Tj = 175 °C)800 / 610 A
ICRM (1 ms)1200 A
Isolation voltage Visol4000 V (AC, 1 min)
PackageSEMiX 3s
DatasheetAvailable on this page (PDF)

Note: Datasheet marked Target Data.

Technical document (PDF)  |  Request a quote for SEMIX603GB066HDS (reply within 24 hours)

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