SEMiX205BT07F3SC4 Semikron - IGBT Module

Category: IGBT Modules

Specifications: 650V, 200A

SEMiX205BT07F3SC4 Semikron IGBT Module

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SEMiX205BT07F3SC4 Description

SEMiX205BT07F3SC4 is a 650 V / 200 A 3-level hybrid SiC IGBT module (IGBT + SiC diode) from Semikron Danfoss (SEMiX 5p package). Typical applications: high frequency resonant converter, Interleaved active rectifier.

USComponent supplies SEMiX205BT07F3SC4 and other Semikron power modules. Request a quote for price and lead time - we reply within 24 hours.

Also available as SEMiX205BT07F3SC4-M04 / -M07 (pre-applied TIM: HALA P8 / HP-PCM).

Summary of Features

  • Solderless assembling solution with PressFIT signal pins and screw power terminals
  • IGBT 3 High Speed Trench Technology
  • Silicon Carbide (SiC) Free-wheeling Schottky diodes : Diode 1 (D1…D4)
  • Silicon anti-parallel diodes , Diode 2 (D5…D8)
  • VCE(sat) with positive temperature coefficient
  • Low inductance case
  • Reliable mechanical design with injection moulded terminals and reliable internal connections
  • UL recognized file no. E63532

Target Applications

Semikron SEMiX205BT07F3SC4 is used for High frequency resonant converter, Interleaved active rectifier.

Key Specifications

SEMiX205BT07F3SC4 is a 650 V / 200 A 3-level hybrid SiC IGBT module (IGBT + SiC diode) from Semikron Danfoss (SEMiX 5p package). Source: Semikron Danfoss datasheet and product data.

ParameterValue
ManufacturerSemikron Danfoss
Product typeHybrid SiC IGBT module (IGBT + SiC diode)
Configuration3-level
Collector-emitter voltage (VCES)650 V
Nominal collector current (IC nom)200 A
Chip technologySiC Diode + IGBT 3 (Trench)
PackageSEMiX 5p
Supply status (Semikron)Active (new)
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for SEMiX205BT07F3SC4 (reply within 24 hours)

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