IXGH20N60A IXYS - MOSFET Module

Category: MOSFET Modules

Specifications: 600V, 20A

IXGH20N60A IXYS MOSFET  from IXYS

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IXGH20N60A Description

IXGH20N60A is a high speed IGBT from IXYS, rated 600V, 20A.

USComponent supplies IXGH20N60A and other power semiconductors and power supplies, including discontinued types. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • International standard packages
  • 2nd generation HDMOS process
  • High current handling capability
  • MOS gate turn-on - drive simplicity

Target Applications

IXYS IXGH20N60A is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXGH20N60A is a high speed IGBT from IXYS, rated 600V, 20A. Source: manufacturer datasheet.

ParameterValue
ManufacturerIXYS
Collector-emitter voltage VCES600 V
Continuous collector current IC (TC = 25 °C)40 A
IC (TC = 90 °C)20 A
Pulsed collector current ICM80 A
VCE(on) / VCE(sat)3.0 V max.
Max. power dissipation (TC = 25 °C)150 W
PackageTO-247 AD
DatasheetAvailable on this page (PDF)

Note: data taken from the IXYS datasheet of IXGH/IXGM 20N60 / 20N60A, which covers IXGH20N60A.

Technical document (PDF)  |  Request a quote for IXGH20N60A (reply within 24 hours)

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