IXKN75N60C IXYS - Power MOSFET Module

Category: MOSFET Modules

Specifications: 600V,75A

IXKN75N60C, IXYS, Power Transistor Module

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IXKN75N60C Description

IXYS makes the IXKN75N60C, a 600 V, 75 A power MOSFET (CoolMOS). Fast switching makes it a good fit for SMPS, DC-DC converters and low-voltage, high-current motor drives.

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Summary of Features

IXKN75N60C is a 600 V / 75 A MOSFET module from IXYS.

  • Electrically isolated copper base (AlN ceramic substrate)
  • Fast CoolMOS power MOSFET, 3rd generation
  • Avalanche rated for unclamped inductive switching (UIS)
  • Applications: SMPS, UPS, PFC, welding, inductive heating

Target Applications

IXYS IXKN75N60C is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXKN75N60C is a 600 V / 75 A MOSFET module from IXYS. Source: manufacturer datasheet (detailed).

ParameterValue
ManufacturerIXYS
Product typeMOSFET module
ConfigurationSingle N-channel MOSFET (CoolMOS)
PackageminiBLOC, SOT-227 B
Drain-source voltage (VDSS)600 V (TVJ = 25 °C to 150 °C)
Continuous drain current (ID25)75 A (TC = 25 °C)
Continuous drain current (ID90)50 A (TC = 90 °C)
Pulsed drain current (ID puls)250 A (tp limited by TJmax)
On-resistance (RDS(on))typ. 30 mΩ / max. 36 mΩ (VGS = 10 V, ID = ID90)
Gate threshold voltage (VGS(th))2.1 to 3.9 V (VDS = 20 V, ID = 5 mA)
Total gate charge (Qg)500 nC (VGS = 0 to 10 V, VDS = 350 V, ID = 100 A)
Thermal resistance (RthJC)0.22 K/W
Operating junction temperature (TVJ)-55 to +150 °C
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for IXKN75N60C (reply within 24 hours)

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