IXFN66N50Q2 IXYS - Power MOSFET Module

Category: MOSFET Modules

Specifications: 500V, 66A

IXFN66N50Q2, IXYS, Power Transistor Module

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IXFN66N50Q2 Description

Rated at 500 V and 66 A, the IXYS IXFN66N50Q2 is a MOSFET module. It suits high-frequency switching jobs such as switch-mode power supplies, DC-DC converters, battery-powered drives and welders.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the IXFN66N50Q2, and please confirm ratings against the datasheet before ordering.

Summary of Features

IXFN66N50Q2 is a 500 V, 66 A power MOSFET (HiPerFET).

Target Applications

IXYS IXFN66N50Q2 is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXFN66N50Q2 is a 500 V, 66 A power MOSFET (HiPerFET). Source: manufacturer datasheet.

ParameterValue
Product typePower MOSFET (HiPerFET)
Drain-source voltage (VDSS)500 V
Drain current (ID)66 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for IXFN66N50Q2 (reply within 24 hours)

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