IXGH17N100AU1 IXYS - MOSFET Module

IXGH17N100AU1 Description

IXGH17N100AU1 is a high speed IGBT with anti-parallel diode (combi pack) from IXYS, rated 1000V, 17A.

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Summary of Features

Target Applications

IXYS IXGH17N100AU1 is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXGH17N100AU1 is a high speed IGBT with anti-parallel diode (combi pack) from IXYS, rated 1000V, 17A. Source: manufacturer datasheet.

Parameter	Value
Manufacturer	IXYS
Collector-emitter voltage VCES	1000 V
Continuous collector current IC (TC = 25 °C)	34 A
IC (TC = 90 °C)	17 A
Pulsed collector current ICM	68 A
VCE(on) / VCE(sat)	4.0 V max.
Max. power dissipation (TC = 25 °C)	150 W
Package	TO-247 AD
Datasheet	Available on this page (PDF)

Note: data taken from the IXYS datasheet of IXGH17N100U1 / IXGH17N100AU1, which covers IXGH17N100AU1.

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