IXSN35N100U1 IXYS - Power MOSFET Module

Category: MOSFET Modules

Specifications: 1000V, 34A

IXSN35N100U1, IXYS,  Power Transistor Module

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IXSN35N100U1 Description

IXYS IXSN35N100U1 is a MOSFET module rated at 1000 V and 34 A. It suits high-frequency switching jobs such as switch-mode power supplies, DC-DC converters, battery-powered drives and welders.

Request a quote for the IXSN35N100U1 and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Summary of Features

IXSN35N100U1 is a 1,000 V, 38 A diode.

Target Applications

IXYS IXSN35N100U1 is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXSN35N100U1 is a 1,000 V, 38 A diode. Source: manufacturer datasheet.

ParameterValue
Product typeDiode
Repetitive peak reverse voltage (VRRM)1,000 V
Rated forward / output current38 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for IXSN35N100U1 (reply within 24 hours)