IXFN80N50 IXYS - MOSFET Module

Category: MOSFET Modules

Specifications: 500V, 80A

IXFN80N50 IXYS MOSFET  from IXYS

Representative image – actual product may differ

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IXFN80N50 Description

IXFN80N50 is a HiPerFET power MOSFET, single die, miniBLOC SOT-227 B from IXYS, rated 500V, 80A. Typical applications: DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers and temperature and lighting controls.

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Summary of Features

  • International standard packages
  • miniBLOC with aluminium nitride isolation
  • Low RDS(on) HDMOS process
  • Rugged polysilicon gate cell structure
  • Unclamped inductive switching (UIS) rated
  • Low package inductance
  • Fast intrinsic rectifier

Target Applications

IXYS IXFN80N50 is used for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers and temperature and lighting controls.

Key Specifications

IXFN80N50 is a HiPerFET power MOSFET, single die, miniBLOC SOT-227 B from IXYS, rated 500V, 80A. Source: manufacturer datasheet.

ParameterValue
ManufacturerIXYS
Drain-source voltage VDSS500 V
Drain current ID25 (TC = 25 °C)80 A
Pulsed drain current IDM320 A
On-resistance RDS(on)50 mΩ
Power dissipation PD700 W
Isolation voltage2500 V~ (1 min)
PackageminiBLOC, SOT-227 B
DatasheetAvailable on this page (PDF)

Note: data taken from the IXYS datasheet of IXFN 80N50 / IXFN 75N50, which covers IXFN80N50.

Technical document (PDF)  |  Request a quote for IXFN80N50 (reply within 24 hours)

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