IXFN26N120P IXYS - Power MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 26A

IXFN26N120P, IXYS, Power Transistor Module

Representative image – actual product may differ

Availability and lead time are confirmed in our quote.

  • ✓ Quote within 24 hours
  • ✓ Original manufacturer parts, inspected before shipping
  • ✓ Credit cards and NET terms accepted

Or email sales@uscomponent.com or call 1-281-968-0718.

IXFN26N120P Description

IXFN26N120P is a 1200 V, 23 A MOSFET module made by IXYS. Typical applications are switch-mode power supplies, DC-DC conversion, battery-powered vehicles and high-frequency welding.

We help engineers and repair technicians find parts like the IXFN26N120P, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.

Summary of Features

IXFN26N120P is a 1,200 V, 26 A power MOSFET (HiPerFET).

Target Applications

IXYS IXFN26N120P is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXFN26N120P is a 1,200 V, 26 A power MOSFET (HiPerFET). Source: manufacturer datasheet.

ParameterValue
Product typePower MOSFET (HiPerFET)
Drain-source voltage (VDSS)1,200 V
Drain current (ID)26 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for IXFN26N120P (reply within 24 hours)

Related Part Numbers

IXFN30N120P
1200V, 30A
IXFN26N100P
1000V, 26A
IXFN32N120P
1200V, 32A
IXFN20N120P
1200V, 20A
IXFN30N110P
1100V, 30A
IXFN32N100P
1000V, 32A
IXFN32N80P
800V, 32A
IXFN36N110P
1100V, 36A
IXFN26N90
900V, 26A
IXFN27N80
800V, 27A
IXFN24N100
1000V, 24A
IXFN280N085
85V, 280A
IXFN230N10
100V, 230A
IXFN200N10P
100V, 200A
IXFN180N15P
150 (V) / 180(A)
IXFN32N120
1200V, 32A