IXFN26N120P IXYS - Power MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 26A

IXFN26N120P, IXYS, Power Transistor Module

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IXFN26N120P Description

IXFN26N120P is a 1200 V, 23 A MOSFET module made by IXYS. Typical applications are switch-mode power supplies, DC-DC conversion, battery-powered vehicles and high-frequency welding.

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Summary of Features

IXFN26N120P is a 1,200 V, 26 A power MOSFET (HiPerFET).

Target Applications

IXYS IXFN26N120P is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXFN26N120P is a 1,200 V, 26 A power MOSFET (HiPerFET). Source: manufacturer datasheet.

ParameterValue
Product typePower MOSFET (HiPerFET)
Drain-source voltage (VDSS)1,200 V
Drain current (ID)26 A
DatasheetAvailable on this page (PDF)

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