IXFN32N120IXYS - MOSFET Module

Specifications: 1200V, 32A

IXFN32N120, IXYS, HiperFET™ Power MOSFETs N-Channel Enhancement Mode

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IXFN32N120 Description

The IXYS IXFN32N120 is a MOSFET module rated at 1200 V and 32 A. HiperFET™ Power MOSFETs N-Channel Enhancement Mode. This type of device is widely used in high-frequency switching such as switch-mode power supplies, DC-DC converters, battery-powered drives and welding equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the IXFN32N120.

Target Applications

IXYS IXFN32N120 is used for DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers and Temperature and lighting controls.

Key Specifications

ManufacturerIXYS
CategoryMOSFET Modules
Rated voltage1200 V
Rated current32 A

Download IXFN32N120 Datasheet

IXFN32N120 PDF Datasheet