IXFN30N120P IXYS - Power MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 30A

IXFN30N120P, IXYS, Power Transistor Module

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IXFN30N120P Description

IXYS IXFN30N120P is a MOSFET module rated at 1200 V and 30 A. It suits high-frequency switching jobs such as switch-mode power supplies, DC-DC converters, battery-powered drives and welders.

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Summary of Features

IXFN30N120P is a 1,200 V, 30 A power MOSFET (HiPerFET).

Target Applications

IXYS IXFN30N120P is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXFN30N120P is a 1,200 V, 30 A power MOSFET (HiPerFET). Source: manufacturer datasheet.

ParameterValue
Product typePower MOSFET (HiPerFET)
Drain-source voltage (VDSS)1,200 V
Drain current (ID)30 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for IXFN30N120P (reply within 24 hours)

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