IXFN30N110P IXYS - Power MOSFET Module

Category: MOSFET Modules

Specifications: 1100V, 30A

IXFN30N110P, IXYS, Power Transistor Module

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IXFN30N110P Description

IXYS makes the IXFN30N110P, a 1100 V, 25 A MOSFET module. Typical applications are switch-mode power supplies, DC-DC conversion, battery-powered vehicles and high-frequency welding.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the IXFN30N110P, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

IXFN30N110P is a 1,100 V, 30 A power MOSFET (HiPerFET).

Target Applications

IXYS IXFN30N110P is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXFN30N110P is a 1,100 V, 30 A power MOSFET (HiPerFET). Source: manufacturer datasheet.

ParameterValue
Product typePower MOSFET (HiPerFET)
Drain-source voltage (VDSS)1,100 V
Drain current (ID)30 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for IXFN30N110P (reply within 24 hours)

Related Part Numbers

IXFN30N120P
1200V, 30A		IXFN36N110P
1100V, 36A		IXFN40N110P
1100V, 40A		IXFN32N120P
1200V, 32A
IXFN32N100P
1000V, 32A		IXFN32N80P
800V, 32A		IXFN26N100P
1000V, 26A		IXFN26N120P
1200V, 26A
IXFN32N120IXFN340N07IXFN34N100IXFN36N100
IXFN36N60IXFN38N100PIXFN38N100Q2IXFN38N80Q2
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