IXFN26N100P IXYS - Power MOSFET Module

Category: MOSFET Modules

Specifications: 1000V, 26A

IXFN26N100P, IXYS, Power Transistor Module

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IXFN26N100P Description

Rated at 1000 V and 23 A, the IXYS IXFN26N100P is a MOSFET module. It suits high-frequency switching jobs such as switch-mode power supplies, DC-DC converters, battery-powered drives and welders.

Request a quote for the IXFN26N100P and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Summary of Features

IXFN26N100P is a 1,000 V, 26 A power MOSFET (HiPerFET).

Target Applications

IXYS IXFN26N100P is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXFN26N100P is a 1,000 V, 26 A power MOSFET (HiPerFET). Source: manufacturer datasheet.

ParameterValue
Product typePower MOSFET (HiPerFET)
Drain-source voltage (VDSS)1,000 V
Drain current (ID)26 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for IXFN26N100P (reply within 24 hours)