FZ1600R17KF6_B2Infineon - IGBT Module

FZ1600R17KF6_B2 Description

FZ1600R17KF6_B2 is an insulated-gate bipolar transistor (IGBT) produced by Infineon Technologies. It is designed for high-power switching applications in industrial and renewable energy systems, such as wind turbines, solar inverters, and electric vehicles. The FZ1600R17KF6_B2 is a third-generation IGBT that combines low switching losses with high current density and high blocking voltage capabilities. It has a maximum voltage rating of 1700V and can handle a continuous current of 1600A. The device features a low on-state voltage drop and a fast switching speed, which helps to reduce power losses and increase efficiency. The IGBT is packaged in a module format and includes built-in protection features such as short-circuit protection, over-temperature protection, and under-voltage lockout. These features help to protect the device from damage due to overloading or overheating. The FZ1600R17KF6_B2 is also designed for easy paralleling, making it suitable for use in high-power applications that require multiple devices to be connected in parallel. The device also features a high level of reliability and a long operating life, making it suitable for use in demanding applications. Overall, the FZ1600R17KF6_B2 is a high-performance IGBT that offers excellent efficiency, high power handling capabilities, and reliable protection features. It is suitable for a wide range of industrial and renewable energy applications where high power and efficiency are required, but with a higher current rating compared to the FZ1200R17KF4.

Target Applications

Infineon FZ1600R17KF6_B2 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

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