FZ1200R17KF6C_B2Infineon - IGBT

FZ1200R17KF6C_B2 Description

FZ1200R17KF6C_B2 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies.This IGBT module is designed for use in high power applications, such as industrial motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high power applications.

Summary of Features

FZ1200R17KF6C_B2 is a 1700V 1200A IGBT.

Target Applications

Infineon FZ1200R17KF6C_B2 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

Manufacturer	Infineon Technologies (eupec)
Configuration	Single switch - IGBT with free-wheeling diode
VCES	1700 V
IC	1200 A (TC = 80 °C) / 1950 A (TC = 25 °C)
ICRM	2400 A (tp = 1 ms, TC = 80 °C)
VCE(sat) typ.	2.6 V @ 1200 A
Isolation test voltage	4 kV RMS, 50 Hz, 1 min
Mounting torque	5 Nm
Terminal torque	M4: 2 Nm; M8: 8 - 10 Nm
Weight	1050 g

FZ1200R17KF6C_B2 Video

Download FZ1200R17KF6C_B2 Datasheet

FZ1200R17KF6C_B2 PDF Datasheet