FZ1600R17KF6C_B2Infineon - IGBT Module

FZ1600R17KF6C_B2 Description

FZ1600R17KF6C_B2 is a high-power insulated-gate bipolar transistor (IGBT) module designed for use in industrial and commercial applications. It is manufactured using advanced IGBT technology and is capable of handling high voltages and currents with minimal switching losses. This module features a dual-chip IGBT design, which helps to improve efficiency and reduce switching losses. It is capable of handling up to 1600 amps of current and can operate at voltages up to 1700 volts. The FZ1600R17KF6C_B2 also includes a built-in temperature sensor that allows for precise thermal management, ensuring optimal performance and reliability. In addition to its high-performance IGBTs, this module includes a number of protective features, including short-circuit protection, overcurrent protection, and overvoltage protection. These features help to prevent damage to the module and other components in the system, and ensure safe and reliable operation. The FZ1600R17KF6C_B2 is designed for easy integration into existing motor control systems. It features standard connections for power input and output, as well as a number of control inputs and outputs for interfacing with a variety of control systems.

Summary of Features

FZ1600R17KF6C_B2 is a 1700V 1600A IGBT Module.

Target Applications

Infineon FZ1600R17KF6C_B2 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

Manufacturer	Infineon Technologies (eupec)
Configuration	Single switch - IGBT with free-wheeling diode
VCES	1700 V
IC	1600 A (TC = 80 °C)
ICRM	3200 A (tp = 1 ms, TC = 80 °C)
VCE(sat) typ.	2.6 V @ 1600 A
Isolation test voltage	4 kV RMS, 50 Hz, 1 min
Mounting torque	5 Nm
Terminal torque	M4: 2 Nm; M8: 8 - 10 Nm

FZ1600R17KF6C_B2 Video

Download FZ1600R17KF6C_B2 Datasheet

FZ1600R17KF6C_B2 PDF Datasheet