FF8MR12W1M1H_B11 Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 100A

FF8MR12W1M1H_B11 Infineon SiC MOSFET Module

Representative image – actual product may differ

Availability and lead time are confirmed in our quote.

  • ✓ Quote within 24 hours
  • ✓ Original manufacturer parts, inspected before shipping
  • ✓ Credit cards and NET terms accepted

Or email sales@uscomponent.com or call 1-281-968-0718.

FF8MR12W1M1H_B11 Description

FF8MR12W1M1H_B11 is a 1200 V, 100 A Infineon EasyDUAL SiC MOSFET module (dual), used for high-frequency switching, DC/DC converter, UPS systems, DC charger for EV.

USComponent supplies FF8MR12W1M1H_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • 1,200 V / 100 A dual SiC MOSFET module
  • CoolSiC Trench MOSFET (M1H)
  • EasyDUAL housing
  • Low switching losses for high-frequency operation
  • PressFIT contact technology
  • Integrated NTC temperature sensor

Target Applications

Infineon FF8MR12W1M1H_B11 is used for high-frequency switching applications, DC/DC converter, UPS systems and DC charger for EV.

Key Specifications

FF8MR12W1M1H_B11 is a 1,200 V, 100 A Infineon EasyDUAL SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)1,200 V
Drain current (IDN)100 A
TechnologyCoolSiC Trench MOSFET (M1H)
PackageEasyDUAL

Technical document (PDF)  |  Request a quote for FF8MR12W1M1H_B11 (reply within 24 hours)

Related Part Numbers

FF17MR12W1M1H_B11
1200V, 50A
FF33MR12W1M1H_B11
1200V, 25A
FF8MR12W1M1H_B70
1200V, 100A
FF55MR12W1M1H_B11
1200V, 15A
FF7MR12W1M1H_B17
1200V, 120A
FF6MR12W2M1H_B11
1200V, 150A
FF4MR12W2M1H_B11
1200V, 200A
FF17MR12W1M1H_B70
1200V, 50A
FF800R17KP4_B2
800A 1700V
FF800R17KF6C_B2_S2
800A/1700V
FF800R17KF6C_B2
1700V, 800A
FF800R17KF6B2
1700V, 800A
FF800R17KE3_B2
1700V, 800A
FF800R17KE3
1700V, 800A
FF800R12KL4C
1200V, 800A
FF800R12KF4
1200V, 800A