FF8MR12W1M1H_B11 Infineon - SiC MOSFET Module
FF8MR12W1M1H_B11 Description
FF8MR12W1M1H_B11 is a 1200 V, 100 A Infineon EasyDUAL SiC MOSFET module (dual), used for high-frequency switching, DC/DC converter, UPS systems, DC charger for EV.
USComponent supplies FF8MR12W1M1H_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- 1,200 V / 100 A dual SiC MOSFET module
- CoolSiC Trench MOSFET (M1H)
- EasyDUAL housing
- Low switching losses for high-frequency operation
- PressFIT contact technology
- Integrated NTC temperature sensor
Target Applications
Infineon FF8MR12W1M1H_B11 is used for high-frequency switching applications, DC/DC converter, UPS systems and DC charger for EV.
Key Specifications
FF8MR12W1M1H_B11 is a 1,200 V, 100 A Infineon EasyDUAL SiC MOSFET module. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | SiC MOSFET module |
| Configuration | Dual (half-bridge) |
| Drain-source voltage (VDSS) | 1,200 V |
| Drain current (IDN) | 100 A |
| Technology | CoolSiC Trench MOSFET (M1H) |
| Package | EasyDUAL |
Technical document (PDF) | Request a quote for FF8MR12W1M1H_B11 (reply within 24 hours)
Related Part Numbers
| FF17MR12W1M1H_B11 1200V, 50A | FF33MR12W1M1H_B11 1200V, 25A | FF8MR12W1M1H_B70 1200V, 100A | FF55MR12W1M1H_B11 1200V, 15A |
| FF7MR12W1M1H_B17 1200V, 120A | FF6MR12W2M1H_B11 1200V, 150A | FF4MR12W2M1H_B11 1200V, 200A | FF17MR12W1M1H_B70 1200V, 50A |
| FF800R17KP4_B2 800A 1700V | FF800R17KF6C_B2_S2 800A/1700V | FF800R17KF6C_B2 1700V, 800A | FF800R17KF6B2 1700V, 800A |
| FF800R17KE3_B2 1700V, 800A | FF800R17KE3 1700V, 800A | FF800R12KL4C 1200V, 800A | FF800R12KF4 1200V, 800A |

