FF33MR12W1M1H_B11 Infineon - SiC MOSFET Module

Also written as: FF33MR12W1M1H-B11

Category: MOSFET Modules

Specifications: 1200V, 25A

FF33MR12W1M1H_B11 Infineon SiC MOSFET Module

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FF33MR12W1M1H_B11 Description

FF33MR12W1M1H_B11 is a 1200 V / 25 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies. Typical applications: high-frequency switching application, DC/DC converter, Motor drives, UPS systems.

USComponent supplies FF33MR12W1M1H_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Low inductive design
  • Low switching losses
  • Rugged mounting due to integrated mounting clamps
  • PressFIT contact technology
  • Integrated NTC temperature sensor

Target Applications

Infineon FF33MR12W1M1H_B11 is used for High-frequency switching application, DC/DC converter, Motor drives, UPS systems.

Key Specifications

FF33MR12W1M1H_B11 is a 1200 V / 25 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies (EasyDUAL package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeCoolSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)1200 V
Nominal drain current (ID nom)25 A
PackageEasyDUAL
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for FF33MR12W1M1H_B11 (reply within 24 hours)

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