FF1000UXTR23T2M1_B5 Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 2300V, 2000A

FF1000UXTR23T2M1_B5 Infineon SiC MOSFET Module

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FF1000UXTR23T2M1_B5 Description

FF1000UXTR23T2M1_B5 is a 2300 V, 2000 A Infineon dual SiC MOSFET module (CoolSiC MOSFET (.XT interconnect technology)), used for wind and solar converters, traction converters and high-power drives.

USComponent supplies FF1000UXTR23T2M1_B5 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • High current density
  • Low inductive design
  • Low switching losses
  • AlN substrate with low thermal resistance
  • AlSiC base plate for increased thermal cycling capability
  • High creepage and clearance distances
  • High power density
  • Package with CTI > 600

Target Applications

Infineon FF1000UXTR23T2M1_B5 is used for traction, high-power converters and high-frequency switching applications.

Key Specifications

FF1000UXTR23T2M1_B5 is a 2,300 V, 2,000 A Infineon SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)2,300 V
Drain current (IDN)2,000 A
TechnologyCoolSiC MOSFET (.XT interconnect technology)
PackageXHP 2, AlSiC base plate

Technical document (PDF)  |  Request a quote for FF1000UXTR23T2M1_B5 (reply within 24 hours)

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