FF1300UXTR23T2M1P Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 2300V, 1500A

FF1300UXTR23T2M1P Infineon SiC MOSFET Module

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FF1300UXTR23T2M1P Description

FF1300UXTR23T2M1P is a 2300 V, 1500 A Infineon dual SiC MOSFET module (CoolSiC MOSFET (.XT interconnect technology)), used for wind and solar converters, traction converters and high-power drives.

USComponent supplies FF1300UXTR23T2M1P and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • High current density
  • Low inductive design
  • Low switching losses
  • Substrate for low thermal resistance
  • Copper base plate
  • High creepage and clearance distances
  • High power density
  • Package with CTI > 600
  • Pre-applied thermal interface material

Target Applications

Infineon FF1300UXTR23T2M1P is used for central inverter, wind power generation, energy storage systems, industrial drives, traction drives, DC/DC converter, high-power converters and high-frequency switching applications.

Key Specifications

FF1300UXTR23T2M1P is a 2,300 V, 1,500 A Infineon SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)2,300 V
Drain current (IDN)1,500 A
TechnologyCoolSiC MOSFET (.XT interconnect technology)
PackageXHP 2, pre-applied thermal interface material

Technical document (PDF)  |  Request a quote for FF1300UXTR23T2M1P (reply within 24 hours)

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